An InGaN/SiN_<i>x</i>/Si Uniband Diode Photodetector

A novel self‐powered InGaN/SiN x /Si uniband diode photodetector (PD) is introduced. The full band structure first constructed from the transition of direct tunneling to Fowler‐Nordheim holes through ultrathin SiN interlayer at forward bias in dark. Basis alignment n‐InGaN conduction with p‐Si valence zero bias. Under illumination, photocurrent, responsivity, and bandwidth for PD indicate two distinct operation modes (i) longer (ii) shorter wavelengths incident light. involve absorption Si electron InGaN hole transport across interlayer. noise considerably larger mode than (ii). This attributed presence or absence energy barriers operation. Hence, introduced as an independent parameter discriminate between wavelength regions dual‐wavelength photodetection.